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Controlling the Optimize Deposition of Thin Film in D.C Plasma Magnetron Sputtering and Measuring the Surface Conductivity by Hall Effect

机译:通过霍尔效应控制D.C等离子体磁控溅射中薄膜的优化沉积,并通过霍尔效应测量表面电导率

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Summary form only given. In our investigation, thin films of copper and brass were prepared by D.C. magnetron sputtering and coated on flat glasses. We have investigated the effects of their thicknesses on electrical and optical properties of the films. Also we have discussed on how we can control the rate of deposition in the set of D.C. plasma sputtering magnetron by controlling the beam and nanostructures. Then, we have measured the conductivity of the surfaces by Hall effect. So the results have shown that the resistivity of the thin films is a function of applied voltage. Moreover, we have shown that the decrease in resistivity by increasing the thickness is due to the increment in the carrier concentrations with increase in the thicknesses of films
机译:摘要表格仅给出。在我们的调查中,通过D.C.GageCron溅射制备铜和黄铜的薄膜并涂上平板玻璃。我们研究了厚度对薄膜电气和光学性质的影响。此外,我们还通过控制光束和纳米结构来讨论如何控制D.C.等离子体溅射磁控管的沉积速率。然后,我们通过霍尔效应测量了表面的电导率。因此,结果表明,薄膜的电阻率是施加电压的函数。此外,我们已经表明,通过增加厚度的电阻率降低是由于载体浓度的增量随着薄膜的厚度的增加而增加

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