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Controlling the Optimize Deposition of Thin Film in D.C Plasma Magnetron Sputtering and Measuring the Surface Conductivity by Hall Effect

机译:控制直流等离子磁控溅射中薄膜的最佳沉积并通过霍尔效应测量表面电导率

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Summary form only given. In our investigation, thin films of copper and brass were prepared by D.C. magnetron sputtering and coated on flat glasses. We have investigated the effects of their thicknesses on electrical and optical properties of the films. Also we have discussed on how we can control the rate of deposition in the set of D.C. plasma sputtering magnetron by controlling the beam and nanostructures. Then, we have measured the conductivity of the surfaces by Hall effect. So the results have shown that the resistivity of the thin films is a function of applied voltage. Moreover, we have shown that the decrease in resistivity by increasing the thickness is due to the increment in the carrier concentrations with increase in the thicknesses of films
机译:仅提供摘要表格。在我们的研究中,铜和黄铜的薄膜是通过直流磁控溅射制备的,并涂覆在平板玻璃上。我们已经研究了它们的厚度对薄膜的电学和光学性能的影响。我们还讨论了如何通过控制束和纳米结构来控制一组直流等离子体溅射磁控管中的沉积速率。然后,我们通过霍尔效应测量了表面的电导率。因此结果表明,薄膜的电阻率是施加电压的函数。此外,我们已经表明,通过增加厚度来降低电阻率是由于载流子浓度随膜厚度的增加而增加

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