Influence of graphene on AlGaN/GaN heterostructure as the gate electrode

摘要

An AlGaN/GaN heterostructure with the graphene as gate electrode was manufactured in this study. Comparing with the traditional metal-insulator-semiconductor high electron mobility transistor on the direct-current characteristics, it is found that adopting the graphene as the gate electrode has few influences on the off-state drain leakage current and the saturation drain current of the device. While, the threshold voltage, breakdown voltage and gate leakage current are varied due to the graphene gate. Due to the superior optical properties of graphene, under the 365 nm irradiation, the threshold voltage of negatively shifts by 3.7 V, and the relative variation of the current can reach 6.0×10^{8 times larger than that in the dark.}