ALGAN/GAN HETEROSTRUCTURE FIELD EFFECT TRANSISTOR WITH NIO AS A GATE INSULATOR

摘要

The invention AlGaN / GaN heterostructure field-effect transistors: a transistor using a nickel oxide (NiO) as a gate insulating material in order to increase to reduce the gate leakage current reduces the electron-trapping effect of the (heterostructure field effect transistor HFET) sikimeuroseo maximum drive current the invention relates to manufacture.; The invention To this end, the nickel oxide to a heat treatment in AlGaN / GaN heterostructures form an ohmic electrode of the source and the drain above and those steps that between the two ohmic electrodes by using the electron beam evaporator deposition of nickel, the air-deposited nickel to form, it consists of a step of manufacturing a transistor by forming a gate oxide over the nickel.