Metal-Insulator-Semiconductor Contacts on Ge: Physics and Applications

摘要

We achieve a 70x reduction in specific contact resistivity to 1.28E-6Ωcm² using metal-insulator-semiconductor (MIS) contacts with TiO2. The effectiveness of this method is understood in terms of the electron barrier height, band offsets, and the metal/TiO2 interface. Finally, TiO2 MIS contacts were integrated on Ge N-MOSFETs.