Contact resistivities of metal-insulator-semiconductor contacts and metal-semiconductor contacts

摘要

Applying simulations and experiments, this paper systematically compares contact resistivities (ρ_c) of metal-insulator-semiconductor (MIS) contacts and metal-semiconductor (MS) contacts with various semiconductor doping concentrations (N_d). Compared with the MS contacts, the MIS contacts with the low Schottky barrier height are more beneficial for ρ_c on semiconductors with low N_d, but this benefit diminishes gradually when N_d increases. With high N_d, we find that even an "ideal" MIS contact with optimized parameters cannot outperform the MS contact. As a result, the MIS contacts mainly apply to devices that use relatively low doped semiconductors, while we need to focus on the MS contacts to meet the sub-1 × 10~(-8) Ω cm~2 ρ_c requirement for future Complementary Metal-Oxide-Semiconductor (CMOS) technology.