Capacitance voltage characteristics of the electrochemical cell for bulk silicon micromachining

摘要

The C-V measurement for MOS capacitor technique has been adapted to investigate the anisotropic electrochemical etching of silicon for bulk micromachining C-V characteristics of the etching cell have been obtained during the electrochemical etching process. The behavior of the characteristics has been explained on the basis of various layers at the etching interface.