An Analytical Modeling of Interface Charge Induced Effects on Subthreshold Current and Subthreshold Swing of strained-Si (s-Si) on Silicon-Germinium-on-Insulator (SGOI) MOSFETs

摘要

A surface potential based two-dimensional (2-D) analytical model for subthreshold current and subthreshold swing including the hot carrier induced interface charges effect of strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs is presented. The analytical model takes into account the effects of all device parameters along with Ge mole fraction in the relaxed Si_(1-x)Ge_x layer, interface charge density and length of damaged region on subthreshold characteristics. For the validation of the proposed model, the model results are compared with numerical simulation results obtained from 2-D device simulator ATLAS by Silvaco.