Mechanical Properties and Residual Stress of Thin 3C-SiC(111) Films Determined using MEMS Structures

摘要

3C-SiC(l 11) was grown on Si(l 11) in a thickness range between 20 and 600 nm by low pressure chemical vapor deposition. The mechanical properties and the residual stress were determined using cantilevers and beams. The Young's modulus of the 3C-SiC(111) decreases with decreasing thickness of the epitaxial layer.