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RF MEMS SWITCH USING RESIDUAL STRESS AND PIEZO-DRIVING FORCE, INCLUDING ELASTIC SUPPORT MEMBER, LOWER ELECTRODE, PIEZO-THIN FILM, UPPER ELECTRODE, ARMATURE, AND HIGH FREQUENCY INPUT ELECTRODE AND OUTPUT ELECTRODE
RF MEMS SWITCH USING RESIDUAL STRESS AND PIEZO-DRIVING FORCE, INCLUDING ELASTIC SUPPORT MEMBER, LOWER ELECTRODE, PIEZO-THIN FILM, UPPER ELECTRODE, ARMATURE, AND HIGH FREQUENCY INPUT ELECTRODE AND OUTPUT ELECTRODE
PURPOSE: An RF MEMS switch is provided to maintain switch operation even without applying voltages to a driving unit, by controlling the residual stress generated during manufacturing process. CONSTITUTION: An RF MEMS switch comprises an elastic support member(14), a lower electrode(15), a piezo-thin film, an upper electrode(17), an armature(13), and a high frequency input electrode(11) and a high frequency output electrode(12). The elastic support member supports thin films stacked into layers. The lower electrode is formed on the elastic support member. The piezo-thin film is formed on the lower electrode so as to induce driving forces. The upper electrode is formed on the piezo-thin film. The armature is formed beneath an end of the elastic support member, and controls electrical connection and disconnection of the high frequency input electrode and output electrode. The high frequency input electrode and output electrode unit are spaced apart from the armature for electrical insulation.
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