A 1200 V-class Fin P-body IGBT with ultra-narrow-mesas for low conduction loss

摘要

In this paper, a new 1200 V-class ultra-narrow-mesas fin p-body IGBT (U-Fin-P IGBT) is proposed. Different from the previously demonstrated fin p-body IGBT, a much narrower fin (mesa) width (~0.5 μm) is adopted in the U-Fin-P IGBT to further reduce the conduction loss; whereas the difficulty of doing emitter contact lithography on top of the ultranarrow mesa regions is resolved by using a self-aligned contact formation process design. It is found from numerical simulations that for the same turn-off energy loss, the on-state voltage drop Von (at 150°C) of the U-Fin-P IGBT is ~21% lower than that of the fin p-body IGBT. Furthermore, the U-Fin-P IGBT also shows excellent turn-on dVldt controllability.