Ultra-Fast 1200 V IGBTs Reduce Switching and Conduction Losses

摘要

Anew family of 1200V IGBTs has been optimized for lowest switching losses and smoothest turn-off in higher frequency and motor control applications. This paper will explain new approaches such as the Solderable Front Metal (SFM] technology, which greatly extends power cycling capability, while dual-sided cooling further reduces power dissipation to provide a highly efficient solution, i By utilizing field stop thin wafer technology, a new generation of 1200V IGBTs are capable of achieving typical voltage drop (Yce(on)) as low as 1.7V and typical fall time of less than 100 nsec at their nominal current ratings.