1200-V IGBTs Offer Reduced Switching and Conduction Losses

摘要

International Rectifier announced the introduc-tion of a family of 1200-V Insulated Gate Bipolar Transistors (IGBTs). The new family of 1200-V IGBTs uses thin wafer Field-Stop Trench technology that is asserted to significantly reduce switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.