Insulated gate bipolar transistors; Junctions; Fabrication; Logic gates; Charge carrier processes; Performance evaluation; Silicon;
机译:1200V IGBT可降低开关损耗和传导损耗
机译:超快速1200 V IGBT减少开关和传导损耗
机译:Fin p体IGBT的瞬态导通特性
机译:一种1200 V类鳍片体IGBT,具有超窄台,用于低导电损耗
机译:垂直导电氮化镓鳍片MOSFET的建模,制作和分析
机译:古老的鳍鳍鱼类(Polypteridae)的线粒体系统发育对骨鱼类的身体伸长骨盆鳍损失和颅面形态演变有影响
机译:1200V 100A SIC MOSFET和1200V 100A硅IGBT的性能比较