1200 V IGBT1200 V Reverse Conducting Insulated gate bipolar transistor

摘要

According to one aspect of the present invention, a reverse conducting IGBT is provided. The reverse-conducting IGBT includes a first conductivity-type drift layer doped with a first conductivity-type impurity, a second conductivity-type base doped with a second conductivity-type impurity, and formed on an upper surface of the first conductivity-type drift layer; A first conductivity type emitter region formed inside the second conductivity type base and doped with the first conductivity type impurity, one side extending to the second conductivity type base and formed adjacent to the first conductivity type emitter region a gate, a gate insulating film electrically insulating the gate from the first conductivity type drift layer and the second conductivity type base, a first conductivity type collector layer and a second conductivity type alternately formed under the first conductivity type drift layer A type collector layer may be included, wherein a width of the first conductivity type collector layer may be narrower than a width of the second conductivity type collector layer.