Method of manufacturing reverse conducting insulated gate bipolar transistor and reverse conducting insulated gate bipolar transistor

摘要

IGBT and diode are formed with optimal electrical characteristics on the same semiconductor substrate. IGBT region and FWD region are provided on the same semiconductor substrate. There are a plurality of trenches at predetermined intervals in the front surface of an n type semiconductor substrate, and P-type channel regions at predetermined intervals in the longitudinal direction of the trench between neighboring trenches, thereby configuring a MOS gate. The p-type channel region and n type drift region are alternately disposed in longitudinal direction of the trench in the IGBT region. The p-type channel region and a p type spacer region are alternately disposed in the longitudinal direction of the trench in the FWD region. Pitch in longitudinal direction of the trench of p-type channel region in the IGBT region is shorter than pitch in longitudinal direction of the trench of p-type channel region in the FWD region.