Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor

摘要

This letter presents the dual implant superjunction (SJ) trench reverse-conducting (RC) insulated-gate bipolar transistor (IGBT) concept with two implanted SJ pillars in the drift region: one from the cathode side and another from the anode side. The proposed device is compatible with current manufacturing processes and enables a full SJ structure to be achieved in a 1.2-kV device, as alignment between the pillars is not required. Extensive technology computer aided design (TCAD) simulations have been performed and demonstrated that utilizing this dual implantation technique can result in a 77% reduction in turn-off losses for the full SJ structure, compared to a conventional RC-IGBT. The results show that any snapback in the ON-state waveform significantly increases the turn-off losses and only a deep SJ device (pillar gap < 10 mu m) warrants the additional processing expense.