Effects of Deposition Temperature on Growth and Properties of Pulsed Laser Deposited VO_2 Thin Films and Nanostructures

摘要

Pure crystalline vanadium dioxide (VO_2) exhibits reversible metal to insulator transition at about 341K, making it suitable for the memory devices. We have deposited thin films and nanostructures of VO_2 on quartz substrate using pulsed laser deposition technique. The effects of deposition temperature on the structural and electrical properties have been investigated. X-ray diffraction spectra show that prepared thin films and nanostructures are oriented along (011) direction and crystallinity of the samples depends on the deposition temperature. Scanning electron microscopy reveals the temperature dependent morphological changes in the nanostructures. Temperature dependent resistivity measurement shows metal to insulator transition.