Mobility Modulation in V-shaped Double Quantum Well based HEMT Structure

摘要

In the present work, modulation of low temperature mobility $mathbf{mu}$ is studied theoretically with the application of electric field $pmb{F}_{pmb{e}}$ in a double quantum well HEMT structure whose channel is craved from $pmb{Al}_{x}pmb{Ga}_{mathit{1}-x}pmb{As}$ having V-shaped potential. We show that there is an unusual rise in $pmb{mu}$ at the transition field where the change in subband occupancy occurs, unlike that of the conventional square quantum well systems.