Electric field induced non-linear multisubband electron mobility in V-shaped asymmetric double quantum well structure

摘要

We study the effect of the external electric field Fext on the low-temperature electron mobility μ in an asymmetrically doped Al_xGa_(1-x)As based V-shaped double quantum well (VDQW) structure. We show that nonlinearity of μ occurs under double subband occupancy on account of intersubband effects. The field F_(ext) alters the VDQW potential leading to transfer of subband wave functions between the wells, which affects the scattering potentials and hence μ. In the VDQW structure, due to the alloy channel layer, the alloy disorder (Al-) scattering happens to be significant along with the ionised impurity (Imp-) scattering. The non-linear behaviour of μ is because of μ~(Imp), while the overall magnitude of μ is mostly due to μ~(Al). The increase of difference in the doping concentrations of the outer barriers increases the nonlinearity of μ. The oscillatory character of μ is amended by varying the width of the well and barrier and also the height of the VDQW. Our results can be used to study VDQW based nanoscale field effect transistor structures.