双三角量子阱中不对称性及掺杂浓度对电子拉曼散射的影响

摘要

在有效质量近似下,从理论上研究了非对称双三角量子阱的拉曼散射.推导了导带子带间电子跃迁的微分散射截面表达式,以GaAs/AlxGa1-xAs材料为例进行了数值计算.结果表明,散射光谱不仅与掺杂浓度有关,而且与双量子阱的不对称性有关,随着量子阱不对称性的增加或掺杂浓度的减少,散射峰发生了红移.本工作对设计新型微电子和光电子器件有一定的指导意义.%Electron Raman scattering (ERS) is investigated theoretically in asymmetric triangular double quantum wells (ATDQWs) within the framework of effective-mass approximation. The differential cross-section (DCS) is derived. Numerical calculations are performed for GaAs/AlsGa1-x As ATDQWs. Results show that the ERS spectrum depends not only on the doping content but also on the asymmetry of ATDQWs. The spectrum yields a red shift with increasing the asymmetry of quantum wells or decreasing the Al doping content.