Role of Target-Substrate Distance on the Growth of CuInSe_2 Thin Films by Pulsed Laser Ablation Technique

摘要

CuInSe2 thin films have been deposited on coming glass substrates by pulsed laser ablation technique. The chamber pressure and substrate temperature was maintained at 1 × l0~(-6) torr and 550°C respectively during deposition of the films. The influence of target to substrate (T-S) distance on the structural and optical properties of thin films have been investigated by grazing incidence x-ray diffraction, Raman spectroscopy, scanning electron microscope and UV-Vis-NIR spectroscopy. The study reveals that thin films crystallized in a chalcopyrite structure with highly preferential orientation along (112) plane. Optimum T-S distance has been attained for the growth of thin films with large grain size. An intense Raman peak at 174 cm~(-1) corresponding to dominant Ai vibration mode is gradually shifted to smaller wavenumber with the increase in T-S distance. The optical bandgap energy of the films was evaluated and found to vary with the T-S distance. The bandgap tailing was observed to obey the Urbach rule and the Urbach energy was also calculated for the films. Scanning electron micrographs depicts uniform densely packed grains and EDAX studies revealed the elemental composition of CuInSe2 thin films.