首页> 外国专利> Method of forming slope by use of laser ablation technique, method of forming recessed portion, method of manufacturing organic thin film tranasistor, and organic thin film transistor manufactured by the method

Method of forming slope by use of laser ablation technique, method of forming recessed portion, method of manufacturing organic thin film tranasistor, and organic thin film transistor manufactured by the method

机译:利用激光烧蚀技术形成斜面的方法,形成凹部的方法,有机薄膜晶体管的制造方法以及通过该方法制造的有机薄膜晶体管

摘要

The present invention is a laser ablation technique the method for forming the inclined surface, a method of forming the grooves, a method for producing an organic thin film transistor and a method using which a vertical step of etching the surface of the object does not form to facilitate the subsequent process to an organic thin film transistor manufactured by, further etching the object by irradiating a laser beam on at least a portion of the surface of the object, by the intensity of the laser beam to reach the said area so as to gradually turn into, it is formed surface slope using laser ablation technique, characterized in that to ensure that there is provided a method of forming a method of forming grooves and method for forming the inclined surface.
机译:本发明是一种激光烧蚀技术,一种用于形成倾斜表面的方法,一种用于形成沟槽的方法,一种用于制造有机薄膜晶体管的方法以及一种不形成用于蚀刻物体表面的垂直步骤的方法。为了促进对通过以下方式制造的有机薄膜晶体管的后续处理,该有机薄膜晶体管通过以下方式来进一步蚀刻物体:将激光束照射在物体的至少一部分表面上,并通过激光束的强度使其到达所述区域,从而逐渐变成,使用激光烧蚀技术形成表面倾斜,其特征在于,为了确保提供一种形成凹槽的方法和形成倾斜表面的方法。

著录项

  • 公开/公告号KR100669788B1

    专利类型

  • 公开/公告日2007-01-16

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20040097976

  • 发明设计人 안택;서민철;구재본;강태민;

    申请日2004-11-26

  • 分类号H01L29/786;

  • 国家 KR

  • 入库时间 2022-08-21 20:33:07

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