Analysis of temperature dependent I-V characteristics of Pd/ZnO/n-Si schotky diode by sol-gel method

摘要

The ZnO thin film was deposited on n-Si (100) by sol-gel and spin coating technique. Pd/ZnO/n-Si/Ti/A1 Schottky contact was fabricated by the thermal evaporation method using shadow mask technique. The ZnO thin film was annealed in Ar (argon) atmosphere at 450°C to enhance the structural and surface morphology. The structural and surface morphology of prepared ZnO thin film were characterized by the XRD and SEM and it was found that the thin film was polycrystalline in nature with homogeneous surface. The I-V characteristics of the device were analyzed by the semiconductor parameter analyzer. The semiconductor parameters were determined at different operating temperature in air atmosphere.