机译:SiC肖特基二极管IV特性的位移损伤剂量和低退火温度的ANOVA分析
Arizona State University, School of Electrical, Computer and Energy Engineering 650 East Tyler Mall, Tempe, Arizona 85287;
The Ohio State University, Nuclear Engineering Program, 201 West 19th Avenue Columbus, Ohio 43210;
The Ohio State University, Nuclear Engineering Program, 201 West 19th Avenue Columbus, Ohio 43210;
The Ohio State University, Nuclear Engineering Program, 201 West 19th Avenue Columbus, Ohio 43210;
Rensselaer Polytechnic Institute, Department of Mechanical, Aerospace,and Nuclear Engineering, 110 8th Street, Troy, New York 12180;
Lockheed Martin Space Systems Company, 100 Campus Drive, Newtown, Pennsylvania 18940;
silicon carbide; radiation damage; annealing;
机译:使用阈值接受模拟退火技术分析SiC肖特基二极管的电流-电压-温度特性
机译:使用I-V特性分析高温下的Au / Ti02 / n-Si肖特基势垒二极管
机译:使用I-V特性分析MIS肖特基二极管在高温下的串联电阻和界面状态
机译:SiC肖特基势垒二极管温度和I-V特性的分析与仿真
机译:使用砷化镓肖特基势垒二极管分析室温毫米波混频器。
机译:外延SiC肖特基势垒二极管的大剂量电子辐射和预期的室温自愈
机译:从I-V特性提取p-n二极管串联电阻的新方法及其在二极管基极低温导通分析中的应用
机译:pdCr / siC肖特基二极管传感器在425℃退火的表面和界面特性