Evaluation and reduction of epitaxial wafer defects resulting from carbon-inclusion defects in 4H-SiC substrate

摘要

Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. In this study, we investigated the epitaxial surface defects resulting from the carbon-inclusion defects in 4H-SiC substrates. Most carbon-inclusion defects developed into one of three types of epitaxial surface defects under normal epitaxial growth conditions. Among them, we found a regular hexagonal pit by high-resolution microscopy, which we regarded as a large-pit defect, and which had an adverse impact on the reverse electrical characteristics of Schottky barrier diodes. Conversion of a carbon-inclusion defect to a large-pit defect or a triangular defect could be reduced by reducing the C/Si ratio.