Influence of Rapid Thermal Annealing on Structural, Optical and Electrical Properties of ITO Thin Films

摘要

Indium doped tin oxide (ITO) thin films were deposited on silicon wafer (100) and glass slide by ion assisted electron beam evaporation deposition. After deposition, the ITO thin films were annealed in vacuum (100-300°C) and their structural, optical and electrical properties were systematically investigated. X-ray diffraction, atomic force microscopy, ultraviolet-visible (UV-vis) spectrophotometer and hall-effect measurement were employed to obtain information on the crystallization, transmission and resistivity the films. It was found that the rapid thermal annealing can improve the resistivity of ITO thin films which specializes for the transparent conductive layers.