Influence of the Annealing Temperature on Si/TiO_2 Core/Shell NWs Arrays

摘要

Si/TiO_2 core/shell nanowires arrays were fabricated using atomic layer deposition of TiO_2 shell on Si nanowires (SiNWs) arrays prepared by metal assisted electroless etching method. After deposition, the Si/TiO_2 nanowires arrays were annealed with different temperature. SEM image shows that annealing makes nanowires gathering on the sample surface. XRD curves indicate that annealing improved the crystalline quality and formed the TiO_2 with anatase phase. Compare to the substrate diffraction peak intensity, annealed at 500°C has strongest diffraction peak intensity. It is demonstrated that TiO_2 shell annealed at 500°C has the best crystalline quality.