Nitrogen-Concentration Control in GaNAs/AlGaAs Quantum Wells Using Nitrogen δ-doping Technique

摘要

GaNAs/Al0.35Ga0.65As multiple quantum wells (MQWs) with nitrogen δ-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen δ-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.