An Artificial Bio-Synapse Based on Ag/a-Si:Ag/a-Si/X Memristors With Different Bottom Electrode X

摘要

In this paper, memristors with three different bottom electrodes as p-Si, Ag and ITO have been fabricated successfully. The memristor is designed as Ag/a-Si: Ag/a-Si/X, in which X refers to p-Si, Ag or ITO. The dielectric layers of a-Si:Ag/a-Si are fabricated by co-sputtering and the final device is completed by standard MEMS processes. The I-V curves, voltage sweeps and response currents, short-term memory (STM) to long-term memory (LTM), and the stability of memristors are studied extensively to mimic the synaptic behavior. It is indicated that the bottom electrode of the Ag/a-Si: Ag/a-Si/X memristors has an obviously influence on the performance of the decivce, and it is suggested that an optimized structural design is needed when a memristive layer is already chosen.