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首页> 外文期刊>IEEE Electron Device Letters >Emulating Short-Term and Long-Term Plasticity of Bio-Synapse Based on Cu/a-Si/Pt Memristor
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Emulating Short-Term and Long-Term Plasticity of Bio-Synapse Based on Cu/a-Si/Pt Memristor

机译:基于Cu / a-Si / Pt忆阻器的生物突触短期和长期可塑性模拟

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摘要

Short-term plasticity and long-term plasticity of bio-synapse are thought to underpin critical physiological functions in neural circuits. In this letter, we vividly emulated the short-term and long-term synaptic functions in a single Cu/a-Si/Pt memristor. By controlling the injection quantity of Cu cations into the a-Si layer, the device showed volatile and non-volatile resistive switching behaviors. Owing to the unique characteristics of Cu/a-Si/Pt device, the short-term synaptic functions, i.e., short-term potentiation, pair-pulse facilitation, and long-term functions, i.e., long-term potentiation/depression, spike-timing-dependent plasticity, were mimicked in the memristor successfully. Furthermore, the transition from short-term memory to long-term memory of the device was also observed under repeated stimuli. The experimental results confirm that the Cu/a-Si/Pt memristor with various synaptic behaviors has a potential application in the brain-inspired computing systems.
机译:生物突触的短期可塑性和长期可塑性被认为是神经回路中关键生理功能的基础。在这封信中,我们生动地模拟了单个Cu / a-Si / Pt忆阻器中的短期和长期突触功能。通过控制向a-Si层注入Cu阳离子的量,该器件表现出易失性和非易失性电阻切换行为。由于Cu / a-Si / Pt器件的独特特性,短期突触功能(即短期增强,配对脉冲促进)和长期功能(即长期增强/抑制,尖峰)依赖于时间的可塑性,成功地模仿了忆阻器。此外,在反复刺激下也观察到了从短期记忆到长期记忆的转变。实验结果证实,具有各种突触行为的Cu / a-Si / Pt忆阻器在脑启发性计算系统中具有潜在的应用。

著录项

  • 来源
    《IEEE Electron Device Letters》 |2017年第9期|1208-1211|共4页
  • 作者单位

    Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China;

    Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China;

    Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China;

    Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China;

    Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China;

    Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China;

    Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China;

    Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China;

    Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China;

    Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China;

    Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China;

    Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Memristor; synapse; short-term plasticity; long-term plasticity;

    机译:忆阻器;突触;短期可塑性;长期可塑性;

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