Identifying electronic properties relevant to improving stability in a-Si:H-based cells and overall performance in a-Si,Ge:H-based cells. Annual subcontract report, 18 April 1995--17 April 1996

摘要

The work done during this second phase of the University of Oregon's NREL subcontract focused on degradation studies in both pure a-Si:H and a-Si,Ge:H alloys, as well as a detailed study of the interface between these two materials in a-Si:H/a-Si, Ge:H heterostructures. All samples discussed in this report were produced by the glow-discharge method and were obtained either in collaboration with United Solar Systems Corporation or with researchers at Lawrence Berkeley laboratory. First, the results from the a-Si, Ge:H degradation studies support the conclusion that considerable quantities of charged defects exist in nominally intrinsic material. Researchers found that on light-soaking, all the observed defect sub-bands increased; however, their ratios varied significantly. Second, researchers performed voltage pulse stimulated capacitance transient measurements on a-Si:H/a-Si, Ge:H heterostructure samples and found a clear signature of trapped hole emission extending over long times. Finally, researchers began comparison studies of the electronic properties of a-Si:H grown by glow discharge either with 100% silane, or with silane diluted in H(sub 2) or He gas. The results on these samples indicate that the films grown under high hydrogen dilution exhibit roughly a factor of 3 lower deep defect densities than those grown using pure silane.