Growth of GaN by MOCVD on Rare Earth Oxide on Si(111)

摘要

Growth of GaN on rare earth oxide (REO) buffers grown on silicon (111) was performed. A novel low temperature buffer layer was developed in order to suppress the decomposition of the REO buffer under hydrogen flow during MOCVD. GaN films, grown by this technique, exhibit smooth surface morphologies. XRD studies reveal the formation of an ErN layer during growth.