Microstructural, Optical and Electrical Properties of ZnO: Sn Thin Films Deposited by Sol-Gel Method

摘要

Transparent thin films of Sn-doped ZnO (ZnO: Sn) were deposited onto silica glass substrates by the sol-gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO: Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO: Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.