Effect of Sn-Doped Concentration on Structural, Optical and Electrical Properties of ZnO:Sn (TZO) Thin Films Prepared by Sol-Gel Method

摘要

ZnO:Sn (TZO) thin films were deposited on glass by sol-gel method with 1-5% doped Sn. The X-ray diffraction (XRD) patterns showed that the intensity of peaks firstly increased and then decreased. The optimal peak intensity was obtained for samples doped with 3% Sn, which also showed the greatest grain size and best surface morphology. The transmittance revealed two step absorptions at 300-320 nm and 380-400 nm, and the tail edge at 320-400 nm became more serious with increasing Sn-doped concentration. The optical band gap increased from 3.265 eV with 1% Sn to 3.360 eV with 5% Sn. I-V curves showed that the conductive property changed to ohmic behavior with the increase of Sn-doped concentration. The sheet resistance also declined and then rapidly rose with a minimum value with 3% doped Sn.