The Characteristics of Gettering Ability in Advanced Multi-Chip Packaging Thinned Wafer

摘要

Gettering property of Cu and Ni was investigated after MCP thinned process wafer. The test samples were prepared to various dopant concentration types of CZ or Epitaxial wafer, and various processed thinning conditions corresponding with a total remaining thickness of 100 μm, 50 μm, and 30 μm by backside grinding. It was found that the 30 μm thinned wafer maintains its Cu gettering ability for heavily boron doped samples but Ni contamination decreases the gettering ability for all samples.