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Thin silicon wafer with high gettering ability and production method thereof
Thin silicon wafer with high gettering ability and production method thereof
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机译:高吸杂能力的薄硅片及其生产方法
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摘要
In a silicon wafer having an oxygen precipitate layer, a depth of DZ layer ranging from a wafer surface to an oxygen precipitate layer is 2 to 10 μm and an oxygen precipitate concentration of the oxygen precipitate layer is not less than 5×107 precipitates/cm3.
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机译:在具有氧析出层的硅晶片中,从晶片表面到氧析出层的DZ层的深度为2〜10μm,氧析出层的氧析出浓度为5×10 <Sup> 7 Sup>沉淀/ cm 3 Sup>。
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