Resistance Switching Behavior Dependent of Substrate Temperature for ZnMn_2O_4 Films Deposited by Magnetron Sputtering

摘要

The effect of substrate temperature on the resistance switching properties and the endurance characteristics of ZnMn_2O_4 films, deposited on p-Si substrate by magnetron sputtering, was investigated. The ZnMn_2O_4 films deposited at various substrate temperatures are polycrystalline with spinel structure. The ZnMn_2O_4 films deposited at a substrate temperature of 500°C have the highest R_(HRS), the biggest R_(HRS)/R_(LRS) and the highest VON. Good endurance characteristics have been observed in Ag/ZnMn_2O_4/p-Si devices deposited at 100°C and 300°C, the R_(HRS)/R_(LRS) ratio maintained at about 10~3 after successive 1000 switching cycles, and the stable resistive switching repeat cycles is over 1400, but the repeatable resistive switching cycles for the specimens deposited at 500°C is just 50. These results indicated that the substrate temperature has significant influence on the endurance characteristic of Ag/ZnMn_2O_4/p-Si device.