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Photoinduced Temporal Change of Surface-Potential Undulation on Alq3 Thin Films Observed by Kelvin Probe Force Microscopy

机译:Kelvin探针力显微镜观察到的Alq3薄膜表面潜在的表面势的时间变化

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The surface potential (SP) undulation on the surfaces of tris(8-hydroxyquinolinato) aluminum (III) (Alq3) films has been investigated with Kelvin probe force microscopy (KFM) and scanning near-field optical microscope (SNOM)-KFM. The SP undulation observed on the amorphous Alq3 films with thicknesses of up to 300 nm showed a cloud-like morphology of 200-300 nm in lateral size. The temporal change of SP undulation was traced through cyclic measurement with KFM observation with intermittent photoexposure, as well as in situ localized photoexcitation with SNOM-KFM We concluded that the origin of the SP undulation is the nonuniform distribution of charged traps and drift mobility in the Alq3 films.
机译:已经研究了Kelvin探针力显微镜(KFM)和扫描近场光学显微镜(SNOM)-KFM研究了TRIS(8-羟基喹啉)铝(III)铝(III)铝(A1I)(ALQ3)膜(ALQ3)膜的表面上的表面电位(SP)波动。在厚度高达300nm的无定形Alq3薄膜上观察到的SP波动显示横向尺寸为200-300nm的云样形态。通过与间歇式光曝光的KFM观察循环测量来追踪SP波动的时间变化,以及与SNOM-KFM的原位局部的光诊断我们得出结论,SP波动的起源是带电陷阱的非均匀分布和漂移流动性ALQ3电影。

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