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Surface Morphological and Electrical Characterization of Silicon Nanowires (SiNWs) by Conventional Photolithography Method

机译:常规光刻法的表面形态和电学硅纳米线(SINWS)的形态学和电学特性

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摘要

Recently, the outcome of SiNWs had been greatly anticipated because of the remarkable properties including for biomolecules detection. SiNWs had been developed with size reduction lithography to form silicon wires as the final device sensor. The results of the sensor are analyzed to determine surface morphological and electrical behavior of the silicon wires. The relationship between value of the current is directly proportional to voltage values. SiNWs also been tested with metallic presence such as GNPs to detect the electrical measurement. In the future, SiNWs can be used as the repeatability, stability and high bio-compatibility for biomolecules detection such as proteins, RNA, DNA and antibodies.
机译:最近,由于包括用于生物分子检测的显着性能,因此,SINWS的结果得到了极大的预期。 SINWS已经开发出尺寸减小光刻,以将硅线作为最终装置传感器形成。分析传感器的结果以确定硅线的表面形态和电动。电流值之间的关系与电压值成正比。 SINWS也用金属存在测试,例如GNPS以检测电测量。将来,Sinws可用作生物分子检测的可重复性,稳定性和高生物兼容性,例如蛋白质,RNA,DNA和抗体。

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