Carbon nitride films prepared by PECVD in CH_4-NH_3 precursor

摘要

Carbon nitride (CN_x) films were fabricated by plasma enhanced chemical vapor deposition technology in methane-ammonia system, in which the plasma was excited by the hollow cathode glow discharge. The composition, microstructure and hardness of the deposited films were investigated by measurements employing X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and nano-indentation experiment. The results indicate that the nitrogen content in the film varies from 4.2 to 8.6 at.% and the nitrogen atoms are bonded to carbon atoms through C-N, C=N and C≡N bonds. Furthermore, higher nitrogen content is in favor of the formation of C-N bond, which may enhance the film hardness.