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METHOD FOR FORMING CARBON-CONTAINING SILICON/METAL OXIDE OR NITRIDE FILM BY ALD USING SILICON PRECURSOR AND HYDROCARBON PRECURSOR
METHOD FOR FORMING CARBON-CONTAINING SILICON/METAL OXIDE OR NITRIDE FILM BY ALD USING SILICON PRECURSOR AND HYDROCARBON PRECURSOR
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机译:硅前驱体和烃前驱体通过ALD形成含碳硅/金属氧化物或氮化物膜的方法
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摘要
An oxide or nitride film containing carbon and at least one of silicon and metal is formed by ALD conducting one or more process cycles, each process cycle including: feeding a first precursor in a pulse to adsorb the first precursor on a substrate; feeding a second precursor in a pulse to adsorb the second precursor on the substrate; and forming a monolayer constituting an oxide or nitride film containing carbon and at least one of silicon and metal on the substrate by undergoing ligand substitution reaction between first and second functional groups included in the first and second precursors adsorbed on the substrate. The ligand may be a halogen group, —NR2, or —OR.
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