Mask formation on GaAs substrate by focused ion beams of Ga+ for plasma chemical etching

摘要

This paper presents a masking layer formation using the focused ion beams method on the substrate surface of its own undoped gallium arsenide for subsequent plasma chemical etching. Focused ion beam was processed to create a mask for ion-induced plasma-chemical processing. The main parameters affecting the formation of nanoscale structures such as the accelerating voltage of a focused ion beam and the etching time in the plasma are investigated. With an increase in the etching time, the depth of the structures obtained decreased from 68 to 2.5 nm. The possibility of using this method for the formation of nanoscale structures without using liquid lithography is shown.