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Anisotropic etching of structures defined by etching mask in silicon substrate involves periodic deposition of fluoropolymer from exotic fluorocarbon by plasma polymerization, alternating with plasma etching
Anisotropic etching of structures defined by etching mask in silicon substrate involves periodic deposition of fluoropolymer from exotic fluorocarbon by plasma polymerization, alternating with plasma etching
In a process for anisotropic etching of structures defined by an etching mask in a silicon substrate with a plasma, charged with an etching gas, at least at times, and a polymerization gas, at least at times, a fluorocarbon gas selected from compounds with formulae corresponding to hexafluorocyclobutene, octafluorocyclopentene or difluoroethene or a mixture of these is used as polymerization gas. In a process for anisotropic etching of structures defined by an etching mask in a silicon substrate with a plasma, charged with an etching gas, at least at times, and a polymerization gas, at least at times, a fluorocarbon gas selected from C4F6, C5F8. C2H2F2 or a mixture of these is used as polymerization gas.
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机译：在用于各向异性蚀刻结构的方法中，该结构由在硅基板中具有等离子体的蚀刻掩模限定，该等离子体至少有时填充有蚀刻气体，并且至少有时填充有聚合气体，所述碳氟化合物气体选自具有下式的化合物对应于六氟环丁烯，八氟环戊烯或二氟乙烯的它们或它们的混合物用作聚合气体。在用于各向异性蚀刻结构的方法中，该结构由具有等离子体的硅基板中的蚀刻掩模限定，所述等离子体至少有时填充有蚀刻气体，并且至少有时填充有聚合气体，所述碳氟气体选自C4F6，C5F8 。 C 2 H 2 F 2或它们的混合物用作聚合气体。
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