CHARACTERIZATION AND MODELING OF INTEGRATED DIODE IN 1.2kV 4H-SiC VERTICAL POWER MOSFET

摘要

We have characterized and modeled the integrated diode of a 1.2kV 4H-SiC power MOSFET. We have measured its static and dynamic characteristics up to 200°C and extracted relevant SPICE model parameters. From the extracted turn-on voltage and ideality factors, we conclude that the integral diode is not a pin junction diode, but a unipolar diode.