Metrology for Characterization of Wafer Thickness Uniformity During 3D-IC Processing: SEMATECH Workshop on 3D Interconnect Metrology - (PPT)

摘要

Utilizes mount that has 2-3 orders of magnitude lower gravity deflection - Leverages technology for ultra-precise photo mask characterization - Avoids gravity sag vs. accounting for it - eliminates the need for significant assumptions. Data shows significantly better measurement repeatability using wire support over 3-point mount. Correlation of wafer TTV and stack TTV demonstrates MSP value. Actual data points every <1 mm gives high fidelity data with little/no prior assumptions on the part shape - Data density invaluable to characterize Si wafers and carrier wafers - You must be able to see the error to achieve required performance - Substantial opportunity to use data for process enhancements (IC manufacture (silicon wafer flatness), glass wafer flatness/TTV, carrier wafer recycling).