Study of Electroosmotic Micro-Flow Enhanced Abrasives Distribution in nanoparticle Contained slurry foe Copper Chemical Mechanical Planarization

摘要

In chemical mechanical polishing process, the abrasives inside the slurry are always passively acting between the pad and wafer surface. If the abrasive controlling technique is able to be realized, it will bring the improvement of efficiency to CMP process. In this study, we used a technique, EKF-CMP, electro kinetic force assisted CMP, it generates the micro-flow field by electroosmostic phenomenon for abrasive during CMP process. The increasing disturbance of flow enhances the uniformity of abrasive distribution and polishing efficiency. Beshides, the water-soluble fullerene C_(60), β-CD(C_(60)), is also introduced in the CMP process to participating in circulation and polishing with SiO_2 abrasives. The results are showing material removal rate by using the mixture slurry of SiO_2/β-CD(C_(60)) after CMP and EKF-CMP. The result of flow visualization device helped us to compare with the simulation of COMSOL.