Fabrication and Electrical Characterization of Vacuum Deposited n-CdTe/p-ZnTe Heterojunction Diodes

摘要

The study of n-CdTe/p-ZnTc heterojunctions is of vital importance for the fabrication of single junction and tandem solar cells. In the present research work n-CdTc/p-ZnTc heterojunction diodes were prepared by high vacuum deposition technique. The growth conditions required for obtaining desired quality n-CdTe and p-ZnTc films were optimized by performing a series of trials. The n-CdTe/p-ZnTc heterojunctions were prepared by first depositing CdTe film on glass substrate and then depositing ZnTc flim on top of CdTe. Detailed electrical characterization of the heterojunction was performed. The conduction in the heterojunction was predominantly due to thermionic emission at low voltages. However at higher voltages space charge limited conduction was found to be dominant. The barrier height of the heterojunction was deduced by studying the I-V characteristics.