Prediction of Resist Sensitivity for Extreme Ultraviolet Lithography at 6.x nm Wavelength - (PPT)

摘要

Prediction of the sensitivities for 6 7 nm was performed, assuming that each resist has a particular required absorption dose regardless of exposure wavelength. The obtained and theoretically predicted sensitivities agreed well, thereby confirming the validity of the prediction. Sensitivities for 6x nm can be roughly predicted by ones for 13.5 nm EUV. The predictions of the resist sensitivity demonstrated here will be useful for the selection or novel development of high sensitivity resists for future extension of EUVL.