RESIST COMPOSITION FOR EXTREME ULTRAVIOLET RAYS, A METHOD FOR MANUFACTURING THE RESIST COMPOSITION, AND A RESIST PATTERN FORMING METHOD CAPABLE OF IMPROVING THE SENSITIVITY OF THE COMPOSITION TO EXTREME ULTRAVIOLET RAYS AND REDUCING THE SENSITIVITY OF THE COMPOSITION TO DEEP ULTRAVIOLET RAYS

摘要

PURPOSE: A resist composition for extreme ultraviolet rays(EUV), a method for manufacturing the resist composition, and a resist patter forming method are provided to improve lithography characteristic in EUV lithography.;CONSTITUTION: The sensitivity of a resist composition for EUV at the KrF light of 248nm is represented by E0KrF. The sensitivity of the resist composition for EUV at EVU light is represented by E0EUV. The E0KrF is higher than the E0EUV. A resist pattern forming method includes the following: a resist film is formed on a support by using the resist composition; the resist film is exposed with EUV; and the resist film is developed to form resist patterns.;COPYRIGHT KIPO 2012